Growth, structuring and interface manipulation of ultrathin oxide and silicate films on silicon single crystal surfaces

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Islam, Shariful: Growth, structuring and interface manipulation of ultrathin oxide and silicate films on silicon single crystal surfaces. Hannover : Gottfried Wilhelm Leibniz Universität Hannover, Diss., 2015, VI, 109 S.

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/8483

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Abstract:
[no abstract]
License of this version: Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type: DoctoralThesis
Publishing status: publishedVersion
Publication date: 2015
Keywords german: Gatedielektrikum, Dielektrizitätskonstante, Stöchiometrie, Leckstrom, hygroskopisch, kristallin, Flachbandspannung, Hysterese, Barium-Silikate
Keywords english: Gate dielectric, dielectric constant, stoichiometry, leakage current, hygroscopic, crystalline, flat band voltage, hysteresis, barium silicates (Ba2SiO4)
DDC: 530 | Physik

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