dc.identifier.uri |
http://dx.doi.org/10.15488/8483 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/8536 |
|
dc.contributor.author |
Islam, Shariful
|
ger |
dc.date.accessioned |
2019-12-07T09:03:54Z |
|
dc.date.available |
2019-12-07T09:03:54Z |
|
dc.date.issued |
2015 |
|
dc.identifier.citation |
Islam, Shariful: Growth, structuring and interface manipulation of ultrathin oxide and silicate films on silicon single crystal surfaces. Hannover : Gottfried Wilhelm Leibniz Universität Hannover, Diss., 2015, VI, 109 S. |
ger |
dc.description.abstract |
[no abstract] |
ger |
dc.language.iso |
eng |
eng |
dc.publisher |
Hannover : Gottfried Wilhelm Leibniz Universität Hannover |
|
dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
ger |
dc.subject |
Gate dielectric |
eng |
dc.subject |
dielectric constant |
eng |
dc.subject |
stoichiometry |
eng |
dc.subject |
leakage current |
eng |
dc.subject |
hygroscopic |
eng |
dc.subject |
crystalline |
eng |
dc.subject |
flat band voltage |
eng |
dc.subject |
hysteresis |
eng |
dc.subject |
barium silicates (Ba2SiO4) |
eng |
dc.subject |
Gatedielektrikum |
ger |
dc.subject |
Dielektrizitätskonstante |
ger |
dc.subject |
Stöchiometrie |
ger |
dc.subject |
Leckstrom |
ger |
dc.subject |
hygroskopisch |
ger |
dc.subject |
kristallin |
ger |
dc.subject |
Flachbandspannung |
ger |
dc.subject |
Hysterese |
ger |
dc.subject |
Barium-Silikate |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Growth, structuring and interface manipulation of ultrathin oxide and silicate films on silicon single crystal surfaces |
eng |
dc.type |
DoctoralThesis |
ger |
dc.type |
Text |
ger |
dc.relation.urn |
urn:nbn:de:gbv:089-8340657464 |
|
dc.bibliographicCitation.firstPage |
VI, 109 S. |
|
dcterms.extent |
VI, 109 S. |
|
dc.description.version |
publishedVersion |
ger |
tib.accessRights |
frei zug�nglich |
ger |