Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Rogge, M.C.; Fühner, C.; Keyser, U.F.; Haug, Rolf J.; Bichler, M.; Abstreiter, G.; Wegscheider, W.

Original version

Rogge, M.C.; Fühner, C.; Keyser, U.F.; Haug, R.J.; Bichler, M. et al.: Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots. In: Applied Physics Letters 83 (2003), Nr. 6, S. 1163-1165. DOI: https://doi.org/10.1063/1.1599972

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/2831

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Abstract:
A study was performed on combined electron-beam lithography and atomic force microscopy used for the fabrication of variable-coupling quantum dots. The conventional electron-beam lithography was combined with direct nanofabrication by local anodic oxidation to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. It was found that the combination of both nanolithography methods allowed fabrication of robust in-plane gates.
License of this version:	Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type:	Article
Publishing status:	publishedVersion
Publication date:	2003
Keywords english:	Anodic oxidation, Atomic force microscopy, Electron beam lithography, Heterojunctions, Nanotechnology, Interdot coupling, Semiconductor quantum dots
DDC:	530 \| Physik