dc.identifier.uri |
http://dx.doi.org/10.15488/4048 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/4082 |
|
dc.contributor.author |
Voronkov, Vladimir V.
|
|
dc.contributor.author |
Falster, Robert
|
|
dc.contributor.author |
Batunina, A.V.
|
|
dc.contributor.author |
MacDonald, D.
|
|
dc.contributor.author |
Bothe, Karsten
|
|
dc.contributor.author |
Schmidt, J.
|
|
dc.date.accessioned |
2018-11-27T08:37:44Z |
|
dc.date.available |
2018-11-27T08:37:44Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Voronkov, V.V.; Falster, R.; Batunina, A.V.; MacDonald, D.; Bothe, K. et al.: Lifetime degradation mechanism in boron-doped Czochralski silicon. In: Energy Procedia 3 (2011), S. 46-50. DOI: https://doi.org/10.1016/j.egypro.2011.01.008 |
|
dc.description.abstract |
The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
London : Elsevier Ltd. |
|
dc.relation.ispartofseries |
Energy Procedia 3 (2011) |
|
dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Boron |
eng |
dc.subject |
Electron lifetime |
eng |
dc.subject |
Oxygen |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Boron |
eng |
dc.subject |
Degradation |
eng |
dc.subject |
Oxygen |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Temperature distribution |
eng |
dc.subject |
Boron concentrations |
eng |
dc.subject |
Czochralski silicon |
eng |
dc.subject |
Degradation parameter |
eng |
dc.subject |
Electron lifetime |
eng |
dc.subject |
Interstitial boron |
eng |
dc.subject |
Lifetime degradation |
eng |
dc.subject |
Recombination centres |
eng |
dc.subject |
Temperature dependence |
eng |
dc.subject |
Hole concentration |
eng |
dc.subject.ddc |
620 | Ingenieurwissenschaften und Maschinenbau
|
ger |
dc.title |
Lifetime degradation mechanism in boron-doped Czochralski silicon |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2011.01.008 |
|
dc.bibliographicCitation.volume |
3 |
|
dc.bibliographicCitation.firstPage |
46 |
|
dc.bibliographicCitation.lastPage |
50 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|