Zusammenfassung: | |
The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.
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Lizenzbestimmungen: | CC BY-NC-ND 3.0 Unported - https://creativecommons.org/licenses/by-nc-nd/3.0/ |
Publikationstyp: | Article |
Publikationsstatus: | publishedVersion |
Erstveröffentlichung: | 2011 |
Schlagwörter (englisch): | Boron, Electron lifetime, Oxygen, Silicon, Boron, Degradation, Oxygen, Silicon, Temperature distribution, Boron concentrations, Czochralski silicon, Degradation parameter, Electron lifetime, Interstitial boron, Lifetime degradation, Recombination centres, Temperature dependence, Hole concentration |
Fachliche Zuordnung (DDC): | 620 | Ingenieurwissenschaften und Maschinenbau |
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