Enhanced shot noise in tunneling through a stack of coupled quantum dots
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Original version
Barthold, P.; Hohls, F.; Maire, N.; Pierz, K.; Haug, R.J.: Enhanced shot noise in tunneling through a stack of coupled quantum dots. In: Physical Review Letters 96 (2006), Nr. 24, 246804. DOI:
https://doi.org/10.1103/PhysRevLett.96.246804
Repository version
To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/2893
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Abstract:
We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots. © 2006 The American Physical Society.
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Publication type:
Article
Publishing status:
publishedVersion
Publication date:
2006
Keywords english:
Electric currents
,
Electron tunneling
,
Low temperature effects
,
Semiconductor quantum dots
,
InAs quantum dots
,
Noise properties
,
Super-Poissonian noise
,
Tunneling current
,
Shot noise
DDC:
530 | Physik
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