Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

Zeitler, U.; Schumacher, Hans W.; Jansen, A.G.M.; Haug, Rolf J.

Original version

Zeitler, U.; Schumacher, H.W.; Jansen, A.G.M.; Haug, R.J.: Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation. In: Physical Review Letters 86 (2001), Nr. 5, S. 866-869. DOI: https://doi.org/10.1103/PhysRevLett.86.866

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/2885

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Abstract:
The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.
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Publication type:	Article
Publishing status:	publishedVersion
Publication date:	2001
Keywords english:	Band structure, Carrier mobility, Electron transport properties, Fermi level, Magnetic anisotropy, Magnetoresistance, Molecular orientation, Morphology, Semiconducting silicon, Semiconducting silicon compounds, Landau levels, Stripe-phase formation, Heterojunctions
DDC:	530 \| Physik