Shot noise in tunneling through a single InAs quantum dot
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Original version
Hohls, F.; Nauen, A.; Maire, N.; Pierz, K.; Haug, R.J.: Shot noise in tunneling through a single InAs quantum dot. In: AIP Conference Proceedings 772 (2005), S. 777-778. DOI:
https://doi.org/10.1063/1.1994337
Repository version
To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/2820
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Abstract:
We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measuring the shot noise of the current. We observe an approximately linear voltage dependence of both the shot noise, characterized by the Fano factor, and the tunneling current itself. We ascribe this to the three-dimensional density of states of the emitter and collector and are able to model the voltage dependence using a master equation approach. © 2005 American Institute of Physics.
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Publication type:
Article
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publishedVersion
Publication date:
2005
Keywords english:
quantum dots
,
shot noise measurements
DDC:
530 | Physik
Controlled keywords(GND):
Konferenzschrift
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