Shot noise in tunneling through a single InAs quantum dot

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dc.identifier.uri Hohls, Frank Nauen, André Maire, Niels Pierz, Klaus Haug, Rolf J. 2018-02-23T09:41:29Z 2018-02-23T09:41:29Z 2005
dc.identifier.citation Hohls, F.; Nauen, A.; Maire, N.; Pierz, K.; Haug, R.J.: Shot noise in tunneling through a single InAs quantum dot. In: AIP Conference Proceedings 772 (2005), S. 777-778. DOI:
dc.description.abstract We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measuring the shot noise of the current. We observe an approximately linear voltage dependence of both the shot noise, characterized by the Fano factor, and the tunneling current itself. We ascribe this to the three-dimensional density of states of the emitter and collector and are able to model the voltage dependence using a master equation approach. © 2005 American Institute of Physics. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries AIP Conference Proceedings 772 (2005)
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject quantum dots eng
dc.subject shot noise measurements eng
dc.subject.ddc 530 | Physik ger
dc.title Shot noise in tunneling through a single InAs quantum dot eng
dc.type article
dc.type conferenceObject
dc.type Text
dc.relation.issn 0094243X
dc.bibliographicCitation.volume 772
dc.bibliographicCitation.firstPage 777
dc.bibliographicCitation.lastPage 778
dc.description.version publishedVersion
tib.accessRights frei zug�nglich

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