dc.identifier.uri |
http://dx.doi.org/10.15488/14621 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/14739 |
|
dc.contributor.author |
Rienäcker, Michael
|
|
dc.contributor.author |
Larionova, Yevgeniya
|
|
dc.contributor.author |
Krügener, Jan
|
|
dc.contributor.author |
Wolter, Sascha
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.contributor.author |
Peibst, Robby
|
|
dc.date.accessioned |
2023-09-01T04:26:54Z |
|
dc.date.available |
2023-09-01T04:26:54Z |
|
dc.date.issued |
2021 |
|
dc.identifier.citation |
Rienäcker, M.; Larionova, Y.; Krügener, J.; Wolter, S.; Brendel, R. et al.: Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects. In: EPJ Photovoltaics 12 (2021), 6. DOI: https://doi.org/10.1051/epjpv/2021007 |
|
dc.description.abstract |
Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities-a POLO2-IBC cell-has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-Area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Les Ulis : EDP Sciences |
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dc.relation.ispartofseries |
EPJ Photovoltaics 12 (2021) |
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dc.rights |
CC BY 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by/4.0 |
|
dc.subject |
Charge |
eng |
dc.subject |
Hydrogenation |
eng |
dc.subject |
IBC |
eng |
dc.subject |
Passivating contact |
eng |
dc.subject |
POLO |
eng |
dc.subject |
Polysilicon |
eng |
dc.subject |
Recombination |
eng |
dc.subject.ddc |
600 | Technik
|
|
dc.subject.ddc |
670 | Industrielle und handwerkliche Fertigung
|
|
dc.title |
Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.essn |
2105-0716 |
|
dc.relation.doi |
https://doi.org/10.1051/epjpv/2021007 |
|
dc.bibliographicCitation.volume |
12 |
|
dc.bibliographicCitation.firstPage |
6 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|