dc.identifier.uri |
http://dx.doi.org/10.15488/2638 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2664 |
|
dc.contributor.author |
Tetzlaff, Dominic
|
|
dc.contributor.author |
Dzinnik, Marvin
|
|
dc.contributor.author |
Krügener, Jan
|
|
dc.contributor.author |
Larionova, Yevgeniya
|
|
dc.contributor.author |
Reiter, Sina
|
|
dc.contributor.author |
Turcu, Mircea
|
|
dc.contributor.author |
Peibst, Robby
|
|
dc.contributor.author |
Höhne, Uwe
|
|
dc.contributor.author |
Kähler, Jan-Dirk
|
|
dc.contributor.author |
Wietler, Tobias F.
|
|
dc.date.accessioned |
2018-01-19T12:03:34Z |
|
dc.date.available |
2018-01-19T12:03:34Z |
|
dc.date.issued |
2017 |
|
dc.identifier.citation |
Tetzlaff, D.; Dzinnik, M.; Krügener, J.; Larionova, Y.; Reiter, S. et al.: Introducing pinhole magnification by selective etching: Application to poly-Si on ultra-thin silicon oxide films. In: Energy Procedia 124 (2017), S. 435-440. DOI: https://doi.org/10.1016/j.egypro.2017.09.270 |
|
dc.description.abstract |
Carrier selective junctions formed by polycrystalline silicon (poly-Si) on ultra-thin silicon oxide films are currently in the spotlight of silicon photovoltaics. We develop a simple method using selective etching and conventional optical microscopy to determine the pinhole density in interfacial oxide films of poly-Si on oxide (POLO)-junctions with excellent electrical properties. We characterize the selective etching of poly-Si versus ultra-thin silicon oxide. We use test structures with deliberately patterned openings and 3 nm thin oxide films to check the feasibility of magnification by undercutting the interfacial oxide. With the successful proof of our concept we introduce a new method to access the density of nanometer-size pinholes in POLO-junctions with excellent passivation properties. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier |
|
dc.relation.ispartofseries |
Energy Procedia 124 (2017) |
|
dc.rights |
CC BY-NC-ND 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
|
dc.subject |
carrier selective contacts |
eng |
dc.subject |
pinholes |
eng |
dc.subject |
polysilicon |
eng |
dc.subject |
Tetramethylammonium hydroxide (TMAH) |
eng |
dc.subject |
Etching |
eng |
dc.subject |
Polycrystalline materials |
eng |
dc.subject |
Polysilicon |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Silicon oxides |
eng |
dc.subject |
Interfacial oxides |
eng |
dc.subject |
Passivation properties |
eng |
dc.subject |
pinholes |
eng |
dc.subject |
Polycrystalline silicon (poly-Si) |
eng |
dc.subject |
Selective contacts |
eng |
dc.subject |
Selective etching |
eng |
dc.subject |
Tetramethyl ammonium hydroxide |
eng |
dc.subject |
Ultrathin silicon |
eng |
dc.subject |
Oxide films |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Introducing pinhole magnification by selective etching: Application to poly-Si on ultra-thin silicon oxide films |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
18766102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2017.09.270 |
|
dc.bibliographicCitation.volume |
124 |
|
dc.bibliographicCitation.firstPage |
435 |
|
dc.bibliographicCitation.lastPage |
440 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|