Zusammenfassung: | |
Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition.
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Lizenzbestimmungen: | CC BY-NC-ND 3.0 Unported - https://creativecommons.org/licenses/by-nc-nd/3.0/ |
Publikationstyp: | Article |
Publikationsstatus: | publishedVersion |
Erstveröffentlichung: | 2011 |
Schlagwörter (englisch): | Alloying, Aluminum doped silicon, Crystalline silicon solar cell, In-line evaporation, Local contacts, Crystalline silicon solar cell, High rate, High substrate temperature, In-line, Lifetime mapping, Local contacts, P-type silicon, P-type silicon wafers, Passivation layer, Recombination velocity, Aluminum, Aluminum alloys, Crystalline materials, Evaporation, Passivation, Phase transitions, Photovoltaic effects, Semiconducting silicon compounds, Silicon nitride, Silicon wafers |
Fachliche Zuordnung (DDC): | 530 | Physik |
Kontrollierte Schlagwörter: | Konferenzschrift |
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