The influence of crystallographic orientation on the wetting of silicon on quartz single crystals

Original version

Wei, D.; Gebensleben, T.; Diestel, L.; Alphei, L.; Becker, V.; Becker, J.A.: The influence of crystallographic orientation on the wetting of silicon on quartz single crystals. In: Journal of Materials Science 46 (2011), Nr. 10, S. 3436-3444. DOI: https://doi.org/10.1007/s10853-010-5246-1

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/1676

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Abstract:
Dynamic hexagonal spreading patterns of small silicon droplets on the basal plane (001) of quartz were observed by video microscopy. A detailed analysis of the hexagonal triple line demonstrates that the patterns show slight chiral distortions that can be attributed to the screw axis of the substrate crystal. This article reveals the detailed influence of crystal symmetry on the anisotropy of reactive wetting. In this context, a first discussion about the interplay of wetting and etching of a crystal is provided.
License of this version: CC BY-NC 3.0 Unported - https://creativecommons.org/licenses/by-nc/3.0/
Publication type: Article
Publishing status: publishedVersion
Publication date: 2011
Keywords english: Basal planes, Crystallographic orientations, Reactive wetting, Screw axis, Silicon-on-quartz, Substrate crystals, Triple lines, Video microscopy, Crystal orientation, Crystal symmetry, Quartz, Wetting, Single crystals
DDC: 540 | Chemie

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