The influence of crystallographic orientation on the wetting of silicon on quartz single crystals

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dc.identifier.uri http://dx.doi.org/10.15488/1676
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1701
dc.contributor.author Weiß, Daniel
dc.contributor.author Gebensleben, Tim
dc.contributor.author Diestel, Lisa
dc.contributor.author Alphei, Lukas
dc.contributor.author Becker, Verena
dc.contributor.author Becker, Jörg August
dc.date.accessioned 2017-07-04T10:06:07Z
dc.date.available 2017-07-04T10:06:07Z
dc.date.issued 2011
dc.identifier.citation Wei, D.; Gebensleben, T.; Diestel, L.; Alphei, L.; Becker, V.; Becker, J.A.: The influence of crystallographic orientation on the wetting of silicon on quartz single crystals. In: Journal of Materials Science 46 (2011), Nr. 10, S. 3436-3444. DOI: https://doi.org/10.1007/s10853-010-5246-1
dc.description.abstract Dynamic hexagonal spreading patterns of small silicon droplets on the basal plane (001) of quartz were observed by video microscopy. A detailed analysis of the hexagonal triple line demonstrates that the patterns show slight chiral distortions that can be attributed to the screw axis of the substrate crystal. This article reveals the detailed influence of crystal symmetry on the anisotropy of reactive wetting. In this context, a first discussion about the interplay of wetting and etching of a crystal is provided. eng
dc.language.iso eng
dc.publisher Heidelberg : Springer Verlag
dc.relation.ispartofseries Journal of Materials Science 46 (2011), Nr. 10
dc.rights CC BY-NC 3.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by-nc/3.0/
dc.subject Basal planes eng
dc.subject Crystallographic orientations eng
dc.subject Reactive wetting eng
dc.subject Screw axis eng
dc.subject Silicon-on-quartz eng
dc.subject Substrate crystals eng
dc.subject Triple lines eng
dc.subject Video microscopy eng
dc.subject Crystal orientation eng
dc.subject Crystal symmetry eng
dc.subject Quartz eng
dc.subject Wetting eng
dc.subject Single crystals eng
dc.subject.ddc 540 | Chemie ger
dc.title The influence of crystallographic orientation on the wetting of silicon on quartz single crystals eng
dc.type Article
dc.type Text
dc.relation.issn 0022-2461
dc.relation.doi https://doi.org/10.1007/s10853-010-5246-1
dc.bibliographicCitation.issue 10
dc.bibliographicCitation.volume 46
dc.bibliographicCitation.firstPage 3436
dc.bibliographicCitation.lastPage 3444
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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