Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon

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dc.identifier.uri http://dx.doi.org/10.15488/9275
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/9328
dc.contributor.author Schmidt, Jan
dc.contributor.author Bothe, Karsten
dc.contributor.author Voronkov, Vladimir V.
dc.contributor.author Falster, Robert
dc.date.accessioned 2020-01-31T08:49:00Z
dc.date.available 2020-01-31T08:49:00Z
dc.date.issued 2019
dc.identifier.citation Schmidt, J.; Bothe, K.; Voronkov, V.V.; Falster, R.: Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon. In: Physica Status Solidi (B) Basic Research 257 (2019), Nr. 1, 1900167. DOI: https://doi.org/10.1002/pssb.201900167
dc.description.abstract A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed the activation of two boron–oxygen recombination centers with strongly differing recombination properties for the fast and slow stages of LID, whereas more recent studies found only a single center for both stages. To resolve this controversy, the historic silicon samples of these previous examinations are re-examined in this study after more than one decade. It is found that, in the historic samples, the fast stage can be either described by two different centers or a mixture of the two, depending on the duration of previous dark annealing. A possible solution is suggested based on the involvement of different activating impurities in the boron–oxygen defect. In dark-annealed samples, the defect consisting of boron, oxygen, and the activation impurity is present in two latent configurations, which reconfigure during LID at a fast and a slow stage. In the examined historic silicon samples, which did not undergo a gettering pretreatment, a significant concentration of an additional boron–oxygen defect with a different kind of activating impurity attached exists. The historic and modern results are thus reconciled. eng
dc.language.iso eng
dc.publisher Weinheim : Wiley-VCH Verlag
dc.relation.ispartofseries Physica Status Solidi (B) Basic Research 257 (2019), Nr. 1
dc.rights CC BY-NC-ND 4.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject defects eng
dc.subject lifetime eng
dc.subject light-induced degradation (LID) eng
dc.subject recombination eng
dc.subject silicon eng
dc.subject.ddc 530 | Physik ger
dc.title Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon
dc.type article
dc.type Text
dc.relation.issn 0370-1972
dc.relation.doi https://doi.org/10.1002/pssb.201900167
dc.bibliographicCitation.issue 1
dc.bibliographicCitation.volume 257
dc.bibliographicCitation.firstPage 1900167
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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    Frei zugängliche Publikationen aus An-Instituten der Leibniz Universität Hannover

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