Auflistung Fakultät für Mathematik und Physik nach Schlagwort "Heterojunctions"

Auflistung Fakultät für Mathematik und Physik nach Schlagwort "Heterojunctions"

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  • Assessing the Device-performance Impacts of Structural Defects with TCAD Modeling 
    Needleman, David Berney; Wagner, Hannes; Altermatt, Pietro P.; Buonassisi, Tonio (Amsterdam : Elsevier, 2015)
    Advanced solar cell architectures like passivated emitter and rear (PERC) and heterojunction with intrinsic thin layer (HIT) are increasingly sensitive to bulk recombination. Present device models consider homogeneous bulk ...
  • Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots 
    Rogge, M.C.; Fühner, C.; Keyser, U.F.; Haug, Rolf J.; Bichler, M.; Abstreiter, G.; Wegscheider, W. (College Park, MD : American Institute of Physics, 2003)
    A study was performed on combined electron-beam lithography and atomic force microscopy used for the fabrication of variable-coupling quantum dots. The conventional electron-beam lithography was combined with direct ...
  • Coupling in concentric double quantum rings 
    Mühle, A.; Wegscheider, W.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2007)
    We designed a device consisting of two concentric quantum rings in a GaAsAlGaAs heterostructure. The outer ring is connected to leads while the inner ring is only capacitively coupled to the rest of the system. Measuring ...
  • Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells 
    Gogolin, Ralf; Zielke, D.; Descoeudres, A.; Despeisse, M.; Ballif, C.; Schmidt, J. (London : Elsevier Ltd., 2017)
    In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. ...
  • Direct measurement of the g factor of composite fermions 
    Schulze-Wischeler, F.; Mariani, E.; Hohls, Frank; Haug, Rolf J. (College Park, MD : American Physical Society, 2004)
    The activation gap δ of the fractional quantum Hall states was measured as a function of the perpendicular magnetic field. A linear dependence of δ on magnetic field was observed while approaching the spin-polarization ...
  • Dynamical scaling of the quantum Hall plateau transition 
    Hohls, Frank; Zeitler, U.; Haug, Rolf J.; Meisels, R.; Dybko, K.; Kuchar, F. (College Park, MD : American Physical Society, 2002)
    The dynamical scaling of the quantum Hall plateau phase transition in the frequency range 0.1-55 GHz was examined. A universal scaling function was observed, yielding a dynamical exponent 0.9 ± 0.2. The universal behavior ...
  • Energy dependence of quasiparticle relaxation in a disordered Fermi liquid 
    Schmidt, T.; König, P.; McCann, E.; Fal'ko, V.I.; Haug, Rolf J. (College Park, MD : American Physical Society, 2001)
    Direct measurement of the energy dependence of the inelastic decay rate τ(E) of a quasiparticle state in a disordered conductor was performed using resonant tunneling spectroscopy. Decay rate was obtained from the analysis ...
  • Giant anisotropy of zeeman splitting of quantum confined acceptors in Si/Ge 
    Haendel, K.-M.; Winkler, R.; Denker, U.; Schmidt, O.G.; Haug, Rolf J. (College Park, MD : American Physical Society, 2006)
    Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman ...
  • Kondo effect in a few-electron quantum ring 
    Keyser, U.F.; Fühner, C.; Borck, S.; Haug, Rolf J.; Bichler, M.; Abstreiter, G.; Wegscheider, W. (College Park, MD : American Physical Society, 2003)
    A small tuneable quantum ring with less than ten electrons was shown to exhibit Aharonov-Bohm oscillations as well as Coulomb blockade. At strong coupling to the leads, evidence of a Kondo effect induced by a single spin ...
  • A low-power, low-noise 37-MHz photoreceiver for intersatellite laser interferometers using discrete heterojunction bipolar transistors 
    Barranco, German Fernandez; Sheard, Benjamin S.; Dahl, Christian; Mathis, Wolfgang; Heinzel, Gerhard (Piscataway, NJ : Institute of Electrical and Electronics Engineers Inc., 2018)
    Intersatellite laser interferometers feature quadrant photoreceivers to produce electrical signals from the interfered optical beams. In the particular case of LISA, the expected optical AC beat note has an amplitude of ...
  • Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation 
    Zeitler, U.; Schumacher, Hans W.; Jansen, A.G.M.; Haug, Rolf J. (College Park, MD : American Physical Society, 2001)
    The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. ...
  • Observation of an interedge magnetoplasmon mode in a degenerate two-dimensional electron gas 
    Sukhodub, G.; Hohls, Frank; Haug, Rolf J. (College Park, MD : American Physical Society, 2004)
    The propagation of edge magnetoplasmons (EMP) in a degenerated two-dimensional electron gas was analyzed. Investigations show that an interedge EMP mode attributed to the excitations of boundary between two regions with ...
  • Organic-silicon Solar Cells Exceeding 20% Efficiency 
    Zielke, Dimitri; Niehaves, Claudia; Lövenich, Wilfried; Elschner, Andreas; Hörteis, Matthias; Schmidt, Jan (Amsterdam : Elsevier, 2015)
    Aftera briefreview of therecent evolvement oforganic-silicon heterojunction solar cells,we present here our latest measurements of the saturation current densities (J0) and contact resistances (RC) of crystalline silicon ...
  • Roughness and stability of silicon on insulator surfaces 
    Czubanowski, M.; Tegenkamp, Christoph; Ernst, W.; Pfnür, Herbert (College Park, MD : American Institute of Physics, 2004)
    The feasibility of low temperature processes (below 800°C), to obtain atomically clean and smooth surfaces on (100) oriented silicon on insulator material (SOI) with negligible variation of the top Si film thickness was ...
  • Silicon Heterojunction Solar Cells Combining an a-Si:H (n) Electron-collector with a PEDOT:PSS Hole-collector 
    Gogolin, Ralf; Zielke, Dimitri; Lövenich, Wilfried; Sauer, Rüdiger; Schmidt, Jan (London : Elsevier Ltd., 2016)
    We combine PEDOT:PSS as hole-selective layer on c-Si with a well-passivating electron-selective a-Si:H(n) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the ...

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