Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

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dc.identifier.uri http://dx.doi.org/10.15488/31
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/49
dc.contributor.author Schinke, Carsten
dc.contributor.author Peest, Peter Christian
dc.contributor.author Schmidt, Jan
dc.contributor.author Brendel, Rolf
dc.contributor.author Bothe, Karsten
dc.contributor.author Vogt, Malte R.
dc.contributor.author Kröger, Ingo
dc.contributor.author Winter, Stefan
dc.contributor.author Schirmacher, Alfred
dc.contributor.author Lim, Siew
dc.contributor.author Nguyen, Hieu T.
dc.contributor.author MacDonald, Daniel
dc.date.accessioned 2015-08-07T13:49:17Z
dc.date.available 2015-08-07T13:49:17Z
dc.date.issued 2015
dc.identifier.citation Schinke, Carsten; Peest, Peter Christian; Schmidt, Jan; Brendel, Rolf; Bothe, Karsten; Vogt, Malte R. et al.: Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon. In: AIP Advances 5 (2015), Nr. 6. DOI: http://dx.doi.org/10.1063/1.4923379
dc.description.abstract Metallic Zn nanodisks with hexagonal morphology were obtained onto glass substrate under vacuum thermal evaporation. A thermal characterization of Zn nanodiks showed a lower oxidation temperature than source powder Zn. Different thermal treatment on Zn nanodisks played an important role on the morphology, crystal size and surface vibrational modes of ZnO. The growth of ZnO nanoneedles started at the edge of metallic zinc hexagonal structures according with SEM images, the higher temperature the longer needles were grown. XRD diffractogram confirmed the wurtzite structure of ZnO with metallic nuclei. A wide band between 530 and 580 cm(-1) of Raman scattering corresponded at surface vibrational modes not observed at higher temperature. eng
dc.description.sponsorship Deutsche Bundesstiftung Umwelt
dc.description.sponsorship DFG
dc.language.iso eng ger
dc.publisher Melville : AIP Publishing LLC
dc.rights CC BY 3.0
dc.rights.uri http://creativecommons.org/licenses/by/3.0/
dc.subject crystalline silicon eng
dc.subject silicon eng
dc.subject absorption coefficient eng
dc.subject error analysis eng
dc.subject solar cells eng
dc.subject photoluminescence eng
dc.subject Photovoltaic eng
dc.subject kristallines Silizium ger
dc.subject c-Si ger
dc.subject Silizium ger
dc.subject Absorptionskoeffizient ger
dc.subject Fehleranalyse ger
dc.subject Solarzelle ger
dc.subject Photovoltaikzelle ger
dc.subject Photolumineszenz ger
dc.subject Fotolumineszenz ger
dc.subject Photovoltaik ger
dc.subject.classification Silicium ger
dc.subject.classification Absorptionskoeffizient ger
dc.subject.classification Fehleranalyse ger
dc.subject.classification Solarzelle ger
dc.subject.classification Photolumineszenz ger
dc.subject.classification Fotovoltaik ger
dc.subject.ddc 530 | Physik ger
dc.title Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon eng
dc.type article
dc.type Text
dc.relation.issn 2158-3226
dc.relation.doi http://dx.doi.org/10.1063/1.4923379
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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