dc.identifier.uri |
http://dx.doi.org/10.15488/4485 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/4525 |
|
dc.contributor.author |
Kranz, Christopher
|
|
dc.contributor.author |
Wyczanowski, Sabrina
|
|
dc.contributor.author |
Baumann, Ulrike
|
|
dc.contributor.author |
Dorn, Silke
|
|
dc.contributor.author |
Queisser, Steffen
|
|
dc.contributor.author |
Schweckendiek, Jürgen
|
|
dc.contributor.author |
Pysch, Damian
|
|
dc.contributor.author |
Dullweber, Thorsten
|
|
dc.date.accessioned |
2019-03-06T09:48:58Z |
|
dc.date.available |
2019-03-06T09:48:58Z |
|
dc.date.issued |
2014 |
|
dc.identifier.citation |
Kranz, C.; Wyczanowski, S.; Baumanna, U.; Dorn, S.; Queisser, S. et al.: Industrial cleaning sequences for Al2O3-passivated PERC solar cells. In: Energy Procedia 55 (2014), S. 211-218. DOI: https://doi.org/10.1016/j.egypro.2014.08.121 |
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dc.description.abstract |
In this paper, we investigate different industrial applicable cleaning sequences on test wafers and PERC solar cells in comparison to a laboratory type RCA clean. The cleaning sequences pSC1, HF/HCl, HF/O3 and HF/O3 show lifetimes between 1 ms and 2 ms which is comparable to a laboratory type RCA clean corresponding to a surface recombination velocity Spass below 15 cm/s. The pSC1, HF/HCl clean achieves lifetimes around 1 ms, whereas the PSG-etch shows poor cleaning quality with lifetimes around 500 μs. Reference PERC cells using a rear protection layer before texturing and diffusion demonstrate efficiencies up to 20.4% for the cleaning sequence pSC1, HF/HCl prior to passivation which is comparable to the RCA clean. The HF/O3 cleans result in lower PERC efficiencies up to 20.0% mainly due to a lower Fill Factor which is likely caused by etching of the emit ter and hence increased contact resistance. Investigations of polished test wafers show that the cleaning sequences pSC1, HF/HCl, HF-Dip and pSC1, HF/HCl, HF/O3 are able to sufficiently remove porous silicon from the front side and simultaneously allowing excellent rear surface passivation. A first batch of PERC solar cell results with polished rear surface post texturing and POCl3 diffusion achieves efficiencies of up to 20.7% when applying an RCA clean. However, the pSC1, HF/HCl and pSC1 HF/O3 still exhibit significantly lower efficiencies since in this batch the porous silicon of the emitter was not yet sufficiently removed, which is subject to further optimization. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
London : Elsevier Ltd. |
|
dc.relation.ispartofseries |
Energy Procedia 55 (2014) |
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dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Cleaning sequences |
eng |
dc.subject |
PERC solar cells |
eng |
dc.subject |
Screen-printing |
eng |
dc.subject |
Wet chemical polishing |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
620 | Ingenieurwissenschaften und Maschinenbau
|
ger |
dc.title |
Industrial cleaning sequences for Al2O3-passivated PERC solar cells |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
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dc.relation.doi |
https://doi.org/10.1016/j.egypro.2014.08.121 |
|
dc.bibliographicCitation.volume |
55 |
|
dc.bibliographicCitation.firstPage |
211 |
|
dc.bibliographicCitation.lastPage |
218 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|