Electron and hole trap signal with similar defect parameters in chalcopyrite based solar cells

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dc.identifier.uri http://dx.doi.org/10.15488/4478
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/4518
dc.contributor.author Mertens, Verena
dc.contributor.author Reineke-Koch, Rolf
dc.contributor.author Parisi, Jürgen
dc.date.accessioned 2019-03-06T09:34:01Z
dc.date.available 2019-03-06T09:34:01Z
dc.date.issued 2009
dc.identifier.citation Mertens, V.; Reineke-Koch, R.; Parisi, J.: Electron and hole trap signal with similar defect parameters in chalcopyrite based solar cells. In: Zeitschrift für Naturforschung - Section A Journal of Physical Sciences 64 (2009), Nr. 9-10, S. 658-664. DOI: https://doi.org/10.1515/zna-2009-9-1019
dc.description.abstract Copper chalcopyrite based solar cells with different molar gallium to gallium plus indium ratio (GGI) are looked at, using deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS). Depending on the respective measurement parameters, like reverse bias level, height and length of the voltage pulse applied, either a minority carrier or/and a majority carrier deep level signal is/are detected in the temperature range below 200 K. The AS investigations reveal only one trap signal. After a detailed description of the defect properties taking advantage of the two diode model, we discuss the origin of these trap signals in view of our experimental findings. eng
dc.language.iso eng
dc.publisher Berlin : De Gruyter
dc.relation.ispartofseries Zeitschrift für Naturforschung - Section A Journal of Physical Sciences 64 (2009), Nr. 9-10
dc.rights CC BY-NC-ND 3.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject Defect scpectroscopy eng
dc.subject Thin film photovoltaic eng
dc.subject.ddc 530 | Physik ger
dc.title Electron and hole trap signal with similar defect parameters in chalcopyrite based solar cells
dc.type article
dc.type Text
dc.relation.issn 0932-0784
dc.relation.doi https://doi.org/10.1515/zna-2009-9-1019
dc.bibliographicCitation.issue 9-10
dc.bibliographicCitation.volume 64
dc.bibliographicCitation.firstPage 658
dc.bibliographicCitation.lastPage 664
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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