Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

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dc.identifier.uri http://dx.doi.org/10.15488/4120
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/4154
dc.contributor.author Momeni Pakdehi, D. ger
dc.contributor.author Aprojanz, J. ger
dc.contributor.author Sinterhauf, A. ger
dc.contributor.author Pierz, K. ger
dc.contributor.author Kruskopf, M. ger
dc.contributor.author Willke, P. ger
dc.contributor.author Baringhaus, Jens ger
dc.contributor.author Stöckmann, J.P. ger
dc.contributor.author Traeger, G.A. ger
dc.contributor.author Hohls, Frank ger
dc.contributor.author Tegenkamp, Christoph ger
dc.contributor.author Wenderoth, M. ger
dc.contributor.author Ahlers, Franz-J. ger
dc.contributor.author Schumacher, H.W. ger
dc.date.accessioned 2018-12-06T14:35:50Z
dc.date.available 2018-12-06T14:35:50Z
dc.date.issued 2018
dc.identifier.citation Momeni Pakdehi, D. et al.: Minimum Resistance Anisotropy of Epitaxial Graphene on SiC. In: ACS Applied Materials & Interfaces 10 (2018), S. 6039-6045. DOI: https://doi.org/10.1021/acsami.7b18641 ger
dc.description.abstract We report on electronic transport measurements in rotational square probe configuration in combination with scanning tunneling potentiometry of epitaxial graphene monolayers which were fabricated by polymer-assisted sublimation growth on SiC substrates. The absence of bilayer graphene on the ultralow step edges of below 0.75 nm scrutinized by atomic force microscopy and scanning tunneling microscopy result in a not yet observed resistance isotropy of graphene on 4H- and 6H-SiC(0001) substrates as low as 2%. We combine microscopic electronic properties with nanoscale transport experiments and thereby disentangle the underlying microscopic scattering mechanism to explain the remaining resistance anisotropy. Eventually, this can be entirely attributed to the resistance and the number of substrate steps which induce local scattering. Thereby, our data represent the ultimate limit for resistance isotropy of epitaxial graphene on SiC for the given miscut of the substrate. ger
dc.language.iso eng ger
dc.publisher Washington D.C. : American Chemical Society
dc.relation.ispartofseries ACS Applied Materials & Interfaces 10 (2018) ger
dc.rights ACS AuthorChoice License ger
dc.rights.uri https://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.subject bilayer-free graphene eng
dc.subject isotropic conductance eng
dc.subject resistance anisotropy eng
dc.subject scanning tunneling potentiometry eng
dc.subject SiC epitaxial graphene eng
dc.subject SiC terrace steps eng
dc.subject uniform growth eng
dc.subject.ddc 540 | Chemie ger
dc.title Minimum Resistance Anisotropy of Epitaxial Graphene on SiC ger
dc.type article ger
dc.type Text ger
dc.relation.doi 10.1021/acsami.7b18641
dc.description.version publishedVersion ger


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