Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

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dc.identifier.uri Momeni Pakdehi, D. ger Aprojanz, J. ger Sinterhauf, A. ger Pierz, K. ger Kruskopf, M. ger Willke, P. ger Baringhaus, Jens ger Stöckmann, J.P. ger Traeger, G.A. ger Hohls, Frank ger Tegenkamp, Christoph ger Wenderoth, M. ger Ahlers, Franz-J. ger Schumacher, H.W. ger 2018-12-06T14:35:50Z 2018-12-06T14:35:50Z 2018
dc.identifier.citation Momeni Pakdehi, D. et al.: Minimum Resistance Anisotropy of Epitaxial Graphene on SiC. In: ACS Applied Materials & Interfaces 10 (2018), S. 6039-6045. DOI: ger
dc.description.abstract We report on electronic transport measurements in rotational square probe configuration in combination with scanning tunneling potentiometry of epitaxial graphene monolayers which were fabricated by polymer-assisted sublimation growth on SiC substrates. The absence of bilayer graphene on the ultralow step edges of below 0.75 nm scrutinized by atomic force microscopy and scanning tunneling microscopy result in a not yet observed resistance isotropy of graphene on 4H- and 6H-SiC(0001) substrates as low as 2%. We combine microscopic electronic properties with nanoscale transport experiments and thereby disentangle the underlying microscopic scattering mechanism to explain the remaining resistance anisotropy. Eventually, this can be entirely attributed to the resistance and the number of substrate steps which induce local scattering. Thereby, our data represent the ultimate limit for resistance isotropy of epitaxial graphene on SiC for the given miscut of the substrate. ger
dc.language.iso eng ger
dc.publisher Washington D.C. : American Chemical Society
dc.relation.ispartofseries ACS Applied Materials & Interfaces 10 (2018) ger
dc.rights ACS AuthorChoice License ger
dc.subject bilayer-free graphene eng
dc.subject isotropic conductance eng
dc.subject resistance anisotropy eng
dc.subject scanning tunneling potentiometry eng
dc.subject SiC epitaxial graphene eng
dc.subject SiC terrace steps eng
dc.subject uniform growth eng
dc.subject.ddc 540 | Chemie ger
dc.title Minimum Resistance Anisotropy of Epitaxial Graphene on SiC ger
dc.type article ger
dc.type Text ger
dc.relation.doi 10.1021/acsami.7b18641
dc.description.version publishedVersion ger

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