Linear magnetoresistance in compensated graphene bilayer
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Original version
Vasileva, G.Y.; Smirnov, D.; Ivanov, Y.L.; Vasilyev, Y.B.; Alekseev, P.S. et al.: Linear magnetoresistance in compensated graphene bilayer. In: Physical Review B 93 (2016), Nr. 19, 195430. DOI:
https://doi.org/10.1103/PhysRevB.93.195430
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To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/2874
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Abstract:
We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality, ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry. © 2016 American Physical Society.
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Publication type:
Article
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publishedVersion
Publication date:
2016
Keywords english:
Magnetoresistance
,
bilayer graphene
DDC:
530 | Physik
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