Bimodal counting statistics in single-electron tunneling through a quantum dot
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Original version
Fricke, C.; Hohls, F.; Wegscheider, W.; Haug, R.J.: Bimodal counting statistics in single-electron tunneling through a quantum dot. In: Physical Review B 76 (2007), Nr. 15, 155307. DOI:
https://doi.org/10.1103/PhysRevB.76.155307
Repository version
To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/2860
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Abstract:
We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain voltages for several consecutive electron numbers on the quantum dot. For certain configurations, we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts, we relate this to a slow switching between different electron configurations on the quantum dot. © 2007 The American Physical Society.
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Publication type:
Article
Publishing status:
publishedVersion
Publication date:
2007
Keywords english:
quantum dots
,
single-electron tunneling
,
QPC
DDC:
530 | Physik
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