Dorozhkin, S.I.; Smet, J.H.; von Klitzing, K.; Umansky, V.; Haug, R.J.; Ploog, K.: Comparison between the compressibilities of the zero field and composite-fermion metallic states of the two-dimensional electron system. In: Physical Review B 63 (2001), Nr. 12, 121301. DOI:
https://doi.org/10.1103/PhysRevB.63.121301
Abstract: |
We have studied the capacitance between a two-dimensional electron system and a gate of field-effect transistors, produced from three different wafers with a single remotely doped GaAs/AlxGa1-xAs heterojunction. In the vicinity of the Landau-level filling factor v=1/2, the increment of the capacitance relative to its zero-magnetic-field value, δC1/2, was found to be insensitive to the carrier density, and close to the value as if the particles are noninteracting. This observation implies that electron-electron interaction affects the compressibility of the zero-field and composite-fermion metallic states in a very similar manner.
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License of this version: |
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Publication type: |
Article |
Publishing status: |
publishedVersion |
Publication date: |
2001 |
Keywords english: |
aluminum, arsenic, gallium, article, chemical interaction, density, electron, magnetic field, semiconductor
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DDC: |
530 | Physik
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