Rogge, M.C.; Fühner, C.; Keyser, U.F.; Haug, R.J.: Spin blockade in capacitively coupled quantum dots. In: Applied Physics Letters 85 (2004), Nr. 4, S. 606-608. DOI:
https://doi.org/10.1063/1.1776613
Abstract: |
The spin blockade in capacitively coupled quantum dots was discussed using local anodic oxidation (LAO) and electron beam lithography. The tunability of the interdot coupling as a function of top gate voltage and magnetic field was studied. It was observed that the spatial separation of edge channels in the leads was much smaller in LAO devices. The results show that the spin blockade is useful for spin detection in LAO based quantum dot devices.
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License of this version: |
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Publication type: |
Article |
Publishing status: |
publishedVersion |
Publication date: |
2004 |
Keywords english: |
Anodic oxidation, Atomic force microscopy, Binding energy, Electric conductivity, Electron beam lithography, Electron transitions, Electron tunneling, Magnetic fields, Oscillations, Capacitive couplings, Coupled quantum dots, Spin blockade, Tunnel coupling, Semiconductor quantum dots
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DDC: |
530 | Physik
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