Nanomachining of mesoscopic electronic devices using an atomic force microscope

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dc.identifier.uri http://dx.doi.org/10.15488/2826
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2852
dc.contributor.author Schumacher, Hans W.
dc.contributor.author Keyser, U.F.
dc.contributor.author Zeitler, U.
dc.contributor.author Haug, Rolf J.
dc.contributor.author Eberl, K.
dc.date.accessioned 2018-02-23T10:08:36Z
dc.date.available 2018-02-23T10:08:36Z
dc.date.issued 1999
dc.identifier.citation Schumacher, H.W.; Keyser, U.F.; Zeitler, U.; Haug, R.J.; Eberl, K.: Nanomachining of mesoscopic electronic devices using an atomic force microscope. In: Applied Physics Letters 75 (1999), Nr. 8, S. 1107-1109. DOI: https://doi.org/10.1063/1.124611
dc.description.abstract An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated. © 1999 American Institute of Physics. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Applied Physics Letters 75 (1999), Nr. 8
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject AFM eng
dc.subject 2DEG eng
dc.subject.ddc 530 | Physik ger
dc.title Nanomachining of mesoscopic electronic devices using an atomic force microscope eng
dc.type article
dc.type Text
dc.relation.issn 00036951
dc.relation.doi https://doi.org/10.1063/1.124611
dc.bibliographicCitation.issue 8
dc.bibliographicCitation.volume 75
dc.bibliographicCitation.firstPage 1107
dc.bibliographicCitation.lastPage 1109
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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