- Startseite
- →
- Fakultäten
- →
- Fakultät für Mathematik und Physik
- →
- Dokumentanzeige
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.identifier.uri | http://dx.doi.org/10.15488/2825 | |
| dc.identifier.uri | http://www.repo.uni-hannover.de/handle/123456789/2851 | |
| dc.contributor.author | Vasileva, G.Y.
|
|
| dc.contributor.author | Smirnov, D.
|
|
| dc.contributor.author | Vasilyev, Y.B.
|
|
| dc.contributor.author | Nestoklon, M.O.
|
|
| dc.contributor.author | Averkiev, N.S.
|
|
| dc.contributor.author | Novikov, S.
|
|
| dc.contributor.author | Kaya, I.I.
|
|
| dc.contributor.author | Haug, Rolf J.
|
|
| dc.date.accessioned | 2018-02-23T09:41:31Z | |
| dc.date.available | 2018-03-30T22:05:14Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | Vasileva, G.Y.; Smirnov, D.; Vasilyev, Y.B.; Nestoklon, M.O.; Averkiev, N.S. et al.: Strongly temperature dependent resistance of meander-patterned graphene. In: Applied Physics Letters 110 (2017), Nr. 11, 113104. DOI: https://doi.org/10.1063/1.4978597 | |
| dc.description.abstract | We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors. © 2017 Author(s). | eng |
| dc.language.iso | eng | |
| dc.publisher | College Park, MD : American Institute of Physics | |
| dc.relation.ispartofseries | Applied Physics Letters 110 (2017), Nr. 11 | |
| dc.rights | Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | |
| dc.subject | Electronic properties | eng |
| dc.subject | Graphene devices | eng |
| dc.subject | Quantum Hall effect | eng |
| dc.subject | Temperature distribution | eng |
| dc.subject | Broad temperature ranges | eng |
| dc.subject | Epitaxial graphene | eng |
| dc.subject | Quantum Hall regime | eng |
| dc.subject | Quantum interference | eng |
| dc.subject | Resistance enhancement | eng |
| dc.subject | Temperature dependence | eng |
| dc.subject | Temperature-dependent resistance | eng |
| dc.subject | Weak localization effects | eng |
| dc.subject | Graphene | eng |
| dc.subject.ddc |
530 | Physik
|
ger |
| dc.title | Strongly temperature dependent resistance of meander-patterned graphene | eng |
| dc.type | Article | |
| dc.type | Text | |
| dc.relation.issn | 00036951 | |
| dc.relation.doi | https://doi.org/10.1063/1.4978597 | |
| dc.bibliographicCitation.issue | 11 | |
| dc.bibliographicCitation.volume | 110 | |
| dc.bibliographicCitation.firstPage | 113104 | |
| dc.description.version | publishedVersion | |
| tib.accessRights | frei zug�nglich |
Die Publikation erscheint in Sammlung(en):
-
Fakultät für Mathematik und Physik
Frei zugängliche Publikationen aus der Fakultät für Mathematik und Physik