Strongly temperature dependent resistance of meander-patterned graphene

Originalpublikation

Vasileva, G.Y.; Smirnov, D.; Vasilyev, Y.B.; Nestoklon, M.O.; Averkiev, N.S. et al.: Strongly temperature dependent resistance of meander-patterned graphene. In: Applied Physics Letters 110 (2017), Nr. 11, 113104. DOI: https://doi.org/10.1063/1.4978597

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Zusammenfassung:
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors. © 2017 Author(s).
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Publikationstyp: Article
Publikationsstatus: publishedVersion
Erstveröffentlichung: 2017
Schlagwörter (englisch): Electronic properties, Graphene devices, Quantum Hall effect, Temperature distribution, Broad temperature ranges, Epitaxial graphene, Quantum Hall regime, Quantum interference, Resistance enhancement, Temperature dependence, Temperature-dependent resistance, Weak localization effects, Graphene
Fachliche Zuordnung (DDC): 530 | Physik

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