Strongly temperature dependent resistance of meander-patterned graphene

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dc.identifier.uri http://dx.doi.org/10.15488/2825
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2851
dc.contributor.author Vasileva, G.Y.
dc.contributor.author Smirnov, D.
dc.contributor.author Vasilyev, Y.B.
dc.contributor.author Nestoklon, M.O.
dc.contributor.author Averkiev, N.S.
dc.contributor.author Novikov, S.
dc.contributor.author Kaya, I.I.
dc.contributor.author Haug, Rolf J.
dc.date.accessioned 2018-02-23T09:41:31Z
dc.date.available 2018-03-30T22:05:14Z
dc.date.issued 2017
dc.identifier.citation Vasileva, G.Y.; Smirnov, D.; Vasilyev, Y.B.; Nestoklon, M.O.; Averkiev, N.S. et al.: Strongly temperature dependent resistance of meander-patterned graphene. In: Applied Physics Letters 110 (2017), Nr. 11, 113104. DOI: https://doi.org/10.1063/1.4978597
dc.description.abstract We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors. © 2017 Author(s). eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Applied Physics Letters 110 (2017), Nr. 11
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject Electronic properties eng
dc.subject Graphene devices eng
dc.subject Quantum Hall effect eng
dc.subject Temperature distribution eng
dc.subject Broad temperature ranges eng
dc.subject Epitaxial graphene eng
dc.subject Quantum Hall regime eng
dc.subject Quantum interference eng
dc.subject Resistance enhancement eng
dc.subject Temperature dependence eng
dc.subject Temperature-dependent resistance eng
dc.subject Weak localization effects eng
dc.subject Graphene eng
dc.subject.ddc 530 | Physik ger
dc.title Strongly temperature dependent resistance of meander-patterned graphene eng
dc.type article
dc.type Text
dc.relation.issn 00036951
dc.relation.doi https://doi.org/10.1063/1.4978597
dc.bibliographicCitation.issue 11
dc.bibliographicCitation.volume 110
dc.bibliographicCitation.firstPage 113104
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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