Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well

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dc.identifier.uri http://dx.doi.org/10.15488/2675
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2701
dc.contributor.author Kamata, N.
dc.contributor.author Klausing, H.
dc.contributor.author Fedler, F.
dc.contributor.author Mistele, D.
dc.contributor.author Aderhold, J.
dc.contributor.author Semchinova, O.K.
dc.contributor.author Graul, J.
dc.contributor.author Someya, T.
dc.contributor.author Arakawa, Y.
dc.date.accessioned 2018-01-29T12:57:25Z
dc.date.available 2018-01-29T12:57:25Z
dc.date.issued 2004
dc.identifier.citation Kamata, N.; Klausing, H.; Fedler, F.; Mistele, D.; Aderhold, J. et al.: Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well. In: EPJ Applied Physics 27 (2004), S. 271-273. DOI: https://doi.org/10.1051/epjap:2004128
dc.description.abstract In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by utilizing a below-gap excitation (BGE) light in addition to an above-gap excitation light. The decrease of the band-edge PL intensity due to the addition of the BGE of 1.17 eV indicates the presence of an energy-matched below-gap state in the two-wavelength excited PL. In continuation to our previous efficiency improvement by applying modulation-doping to GaAs/AlGaAs QW's. we focused on several undopcd and Si-doped GaN/AlGaN QW's. Experimental results showed that Si modulation-doping reduces the density of below-gap states in the QW region, hence it is promising for increasing internal quantum efficiency of GaN-based QW's. eng
dc.language.iso eng
dc.publisher Cambridge : Cambridge University Press
dc.relation.ispartofseries EPJ Applied Physics 27 (2004)
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
dc.subject Gallium nitride eng
dc.subject Impurities eng
dc.subject Light emitting diodes eng
dc.subject Luminescence eng
dc.subject Metallorganic chemical vapor deposition eng
dc.subject Modulation eng
dc.subject Molecular beam epitaxy eng
dc.subject Optimization eng
dc.subject Photons eng
dc.subject Quantum efficiency eng
dc.subject Semiconducting aluminum compounds eng
dc.subject Semiconductor doping eng
dc.subject Strain eng
dc.subject Stress relaxation eng
dc.subject Above-gap excitation (AGE) eng
dc.subject Below-gap excitation (BGE) eng
dc.subject III-V semiconductors eng
dc.subject Photon energies eng
dc.subject Semiconductor quantum wells eng
dc.subject.ddc 530 | Physik ger
dc.title Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well
dc.type Article
dc.type Text
dc.relation.issn 1286-0042
dc.relation.doi https://doi.org/10.1051/epjap:2004128
dc.bibliographicCitation.issue März
dc.bibliographicCitation.volume 27
dc.bibliographicCitation.firstPage 271
dc.bibliographicCitation.lastPage 273
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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