dc.identifier.uri |
http://dx.doi.org/10.15488/1368 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1393 |
|
dc.contributor.author |
Werner, Florian
|
|
dc.contributor.author |
Cosceev, A.
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.date.accessioned |
2017-04-21T09:47:39Z |
|
dc.date.available |
2017-04-21T09:47:39Z |
|
dc.date.issued |
2012 |
|
dc.identifier.citation |
Werner, F.; Cosceev, A.; Schmidt, J.: Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells. In: Energy Procedia 27 (2012), S. 319-324. DOI: https://doi.org/10.1016/j.egypro.2012.07.070 |
|
dc.description.abstract |
The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance measurements. The hole capture cross section in the lower half of the bandgap, σp = (4±3)×10 -16 cm2, was found to be independent of energy. The electron capture cross section σn in the upper half of the bandgap decreases from σn = (7±4)×10-15 cm2 at midgap over two orders of magnitude towards the conduction band edge. Numerical simulations of the effective surface recombination velocity based on these recombination parameters show a good agreement with experimental surface recombination velocities for a wide range of excess carrier and surface charge densities. Carrier transport in the inversion layer formed at the n-Si/Al2O3 interface was investigated yielding a sheet resistance of 15 kΩ/, which was reduced to 6 kΩ/ for a surface charge density of -2×1013 cm-2 obtained by corona charging. The applicability of Al2O3 inversion layers as emitters in n-type inversion layer solar cells was demonstrated by short circuit current densities of up to 25 mA/cm2, which show a pronounced dependence on surface charge density. |
eng |
dc.description.sponsorship |
BMU/0325050 |
|
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier BV |
|
dc.relation.ispartofseries |
Energy Procedia 27 (2012) |
|
dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Aluminum oxide |
eng |
dc.subject |
Capture cross section |
eng |
dc.subject |
Inversion layer solar cell |
eng |
dc.subject |
Passivation |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
333,7 | Natürliche Ressourcen, Energie und Umwelt
|
ger |
dc.title |
Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2012.07.070 |
|
dc.bibliographicCitation.volume |
27 |
|
dc.bibliographicCitation.firstPage |
319 |
|
dc.bibliographicCitation.lastPage |
324 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|