dc.identifier.uri |
http://dx.doi.org/10.15488/12623 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/12723 |
|
dc.contributor.author |
Barnscheidt, Yvo
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.contributor.author |
Osten, H. Jörg
|
|
dc.date.accessioned |
2022-08-04T08:31:55Z |
|
dc.date.available |
2022-08-04T08:31:55Z |
|
dc.date.issued |
2020 |
|
dc.identifier.citation |
Barnscheidt, Y.; Schmidt, J.; Osten, H.J.: Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system. In: Journal of Applied Crystallography 53 (2020), S. 1212-1216. DOI: https://doi.org/10.1107/S1600576720009255 |
|
dc.description.abstract |
The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory X-ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg peaks of the Ge layer and Si substrate. The diffraction behaviour of the CSL was analysed using 2θ/φ scans along [100], [110] and [310] directions as well as azimuthal φ scans which revealed a 90° angular symmetry of the CSL. Additionally, different layer thicknesses, from 10 to 580 nm, were analysed, focusing on the dependence of layer thickness on the glancing angles of the satellite peaks. This method provides the ability to analyse whether or not epitaxially grown layers exhibit a periodic array of dislocations, and gain information about the orientation of the interfacial edge dislocations. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Copenhagen : Munksgaard |
|
dc.relation.ispartofseries |
Journal of Applied Crystallography 53 (2020) |
|
dc.rights |
CC BY 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by/4.0/ |
|
dc.subject |
Edge dislocations |
eng |
dc.subject |
Germanium metallography |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
X ray diffraction |
eng |
dc.subject |
Coincidence site lattices |
eng |
dc.subject |
Different layers |
eng |
dc.subject |
Epitaxially grown |
eng |
dc.subject |
Gain information |
eng |
dc.subject |
Grazing incidence X-ray diffraction |
eng |
dc.subject |
Layer thickness |
eng |
dc.subject |
Periodic arrays |
eng |
dc.subject |
Satellite peaks |
eng |
dc.subject |
Crystal lattices |
eng |
dc.subject |
Coincidence site lattices |
eng |
dc.subject |
Dislocation network |
eng |
dc.subject |
Ge/Si |
eng |
dc.subject |
Grazing incidence |
eng |
dc.subject |
Heteroepitaxy |
eng |
dc.subject |
X-ray diffraction |
eng |
dc.subject.ddc |
540 | Chemie
|
ger |
dc.title |
Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.essn |
1600-5767 |
|
dc.relation.issn |
0021-8898 |
|
dc.relation.doi |
https://doi.org/10.1107/S1600576720009255 |
|
dc.bibliographicCitation.volume |
53 |
|
dc.bibliographicCitation.firstPage |
1212 |
|
dc.bibliographicCitation.lastPage |
1216 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|