Low-temperature hysteresis in the field effect of bilayer graphene

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dc.identifier.uri http://dx.doi.org/10.15488/1240
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1265
dc.contributor.author Barthold, P.
dc.contributor.author Lüdtke, T.
dc.contributor.author Schmidt, H.
dc.contributor.author Haug, Rolf J.
dc.date.accessioned 2017-03-31T07:44:24Z
dc.date.available 2017-03-31T07:44:24Z
dc.date.issued 2011
dc.identifier.citation Barthold, P.; Lüdtke, T.; Schmidt, H.; Haug, R.J.: Low-temperature hysteresis in the field effect of bilayer graphene. In: New Journal of Physics 13 (2011), 43020. DOI: https://doi.org/10.1088/1367-2630/13/4/043020
dc.description.abstract Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. eng
dc.description.sponsorship DFG/EXC/QUEST
dc.language.iso eng
dc.publisher Bristol : IOP Publishing Ltd.
dc.relation.ispartofseries New Journal of Physics 13 (2011)
dc.rights CC BY-NC-SA 3.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by-nc-sa/3.0/
dc.subject Back-gate eng
dc.subject Bi-layer eng
dc.subject Charge trap eng
dc.subject Field effects eng
dc.subject Low temperatures eng
dc.subject Sweep rates eng
dc.subject Charge trapping eng
dc.subject Graphene eng
dc.subject Magnetic fields eng
dc.subject Hysteresis eng
dc.subject.ddc 530 | Physik ger
dc.title Low-temperature hysteresis in the field effect of bilayer graphene
dc.type Article
dc.type Text
dc.relation.issn 1367-2630
dc.relation.doi https://doi.org/10.1088/1367-2630/13/4/043020
dc.bibliographicCitation.volume 13
dc.bibliographicCitation.firstPage 43020
dc.description.version publishedVersion
tib.accessRights frei zug�nglich

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