High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells

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dc.identifier.uri http://dx.doi.org/10.15488/1153
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1177
dc.contributor.author Werner, Florian
dc.contributor.author Stals, Walter
dc.contributor.author Görtzen, Roger
dc.contributor.author Veith, Boris
dc.contributor.author Brendel, Rolf
dc.contributor.author Schmidt, Jan
dc.date.accessioned 2017-02-23T13:12:50Z
dc.date.available 2017-02-23T13:12:50Z
dc.date.issued 2011
dc.identifier.citation Werner, F.; Stals, W.; Görtzen, R.; Veith, B.; Brendel, Rolf et al.: High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells. In: Energy Procedia 8 (2011), S. 301-306. DOI: https://doi.org/10.1016/j.egypro.2011.06.140
dc.description.abstract High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6×15.6 cm2 silicon wafers of 10 nm thick Al 2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8×1010 eV-1cm-2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells. eng
dc.description.sponsorship State of Lower Saxony
dc.description.sponsorship German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU)/0325050
dc.language.iso eng
dc.publisher Amsterdam : Elsevier BV
dc.relation.ispartof 1st International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2011, April 17-20 2011, Freiburg, Germany
dc.relation.ispartofseries Energy Procedia 8 (2011)
dc.rights CC BY-NC-ND 3.0
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject Aluminum oxide eng
dc.subject Silicon eng
dc.subject Spatial ALD eng
dc.subject Surface passivation eng
dc.subject Aluminum oxides eng
dc.subject High quality eng
dc.subject High rate eng
dc.subject Homogeneous surfaces eng
dc.subject In-line eng
dc.subject Industrial solar cells eng
dc.subject Injection levels eng
dc.subject Interface state density eng
dc.subject Passivation layer eng
dc.subject Si solar cells eng
dc.subject Spatial ALD eng
dc.subject Surface passivation eng
dc.subject Surface recombination velocities eng
dc.subject Aluminum eng
dc.subject Aluminum coatings eng
dc.subject Atomic layer deposition eng
dc.subject Crystalline materials eng
dc.subject Oxide films eng
dc.subject Oxides eng
dc.subject Photovoltaic effects eng
dc.subject Semiconducting silicon compounds eng
dc.subject Silicon solar cells eng
dc.subject Silicon wafers eng
dc.subject Passivation eng
dc.subject.ddc 530 | Physik ger
dc.title High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells
dc.type article
dc.type conferenceObject
dc.type Text
dc.relation.issn 1876-6102
dc.relation.doi https://doi.org/10.1016/j.egypro.2011.06.140
dc.bibliographicCitation.volume 8
dc.bibliographicCitation.firstPage 301
dc.bibliographicCitation.lastPage 306
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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