dc.identifier.uri |
http://dx.doi.org/10.15488/1153 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1177 |
|
dc.contributor.author |
Werner, Florian
|
|
dc.contributor.author |
Stals, Walter
|
|
dc.contributor.author |
Görtzen, Roger
|
|
dc.contributor.author |
Veith, Boris
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.date.accessioned |
2017-02-23T13:12:50Z |
|
dc.date.available |
2017-02-23T13:12:50Z |
|
dc.date.issued |
2011 |
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dc.identifier.citation |
Werner, F.; Stals, W.; Görtzen, R.; Veith, B.; Brendel, Rolf et al.: High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells. In: Energy Procedia 8 (2011), S. 301-306. DOI: https://doi.org/10.1016/j.egypro.2011.06.140 |
|
dc.description.abstract |
High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6×15.6 cm2 silicon wafers of 10 nm thick Al 2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8×1010 eV-1cm-2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells. |
eng |
dc.description.sponsorship |
State of Lower Saxony |
|
dc.description.sponsorship |
German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU)/0325050 |
|
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier BV |
|
dc.relation.ispartofseries |
Energy Procedia 8 (2011) |
|
dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
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dc.subject |
Aluminum oxide |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Spatial ALD |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject |
Aluminum oxides |
eng |
dc.subject |
High quality |
eng |
dc.subject |
High rate |
eng |
dc.subject |
Homogeneous surfaces |
eng |
dc.subject |
In-line |
eng |
dc.subject |
Industrial solar cells |
eng |
dc.subject |
Injection levels |
eng |
dc.subject |
Interface state density |
eng |
dc.subject |
Passivation layer |
eng |
dc.subject |
Si solar cells |
eng |
dc.subject |
Spatial ALD |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject |
Surface recombination velocities |
eng |
dc.subject |
Aluminum |
eng |
dc.subject |
Aluminum coatings |
eng |
dc.subject |
Atomic layer deposition |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Oxide films |
eng |
dc.subject |
Oxides |
eng |
dc.subject |
Photovoltaic effects |
eng |
dc.subject |
Semiconducting silicon compounds |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject |
Silicon wafers |
eng |
dc.subject |
Passivation |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2011.06.140 |
|
dc.bibliographicCitation.volume |
8 |
|
dc.bibliographicCitation.firstPage |
301 |
|
dc.bibliographicCitation.lastPage |
306 |
|
dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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