High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells

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Werner, F.; Stals, W.; Görtzen, R.; Veith, B.; Brendel, Rolf et al.: High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells. In: Energy Procedia 8 (2011), S. 301-306. DOI: https://doi.org/10.1016/j.egypro.2011.06.140

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Sum total of downloads: 189




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Abstract: 
High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6×15.6 cm2 silicon wafers of 10 nm thick Al 2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8×1010 eV-1cm-2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells.
License of this version: CC BY-NC-ND 3.0
Document Type: article
Publishing status: publishedVersion
Issue Date: 2011
Appears in Collections:Fakultät für Mathematik und Physik

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pos. country downloads
total perc.
1 image of flag of Germany Germany 141 74.60%
2 image of flag of China China 10 5.29%
3 image of flag of United States United States 7 3.70%
4 image of flag of Korea, Republic of Korea, Republic of 7 3.70%
5 image of flag of Taiwan Taiwan 5 2.65%
6 image of flag of France France 5 2.65%
7 image of flag of Netherlands Netherlands 3 1.59%
8 image of flag of Brazil Brazil 2 1.06%
9 image of flag of Russian Federation Russian Federation 1 0.53%
10 image of flag of United Kingdom United Kingdom 1 0.53%
    other countries 7 3.70%

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