dc.identifier.uri |
http://dx.doi.org/10.15488/1152 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1176 |
|
dc.contributor.author |
Mader, Christoph
|
|
dc.contributor.author |
Bock, Robert
|
|
dc.contributor.author |
Müller, Jens
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2017-02-23T13:12:49Z |
|
dc.date.available |
2017-02-23T13:12:49Z |
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dc.date.issued |
2011 |
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dc.identifier.citation |
Mader, C.; Bock, R.; Müller, J.; Schmidt, J.; Brendel, Rolf: Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation. In: Energy Procedia 8 (2011), S. 521-526. DOI: https://doi.org/10.1016/j.egypro.2011.06.176 |
|
dc.description.abstract |
Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition. |
eng |
dc.description.sponsorship |
State of Lower Saxony |
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dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier BV |
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dc.relation.ispartofseries |
Energy Procedia 8 (2011) |
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dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Alloying |
eng |
dc.subject |
Aluminum doped silicon |
eng |
dc.subject |
Crystalline silicon solar cell |
eng |
dc.subject |
In-line evaporation |
eng |
dc.subject |
Local contacts |
eng |
dc.subject |
Crystalline silicon solar cell |
eng |
dc.subject |
High rate |
eng |
dc.subject |
High substrate temperature |
eng |
dc.subject |
In-line |
eng |
dc.subject |
Lifetime mapping |
eng |
dc.subject |
Local contacts |
eng |
dc.subject |
P-type silicon |
eng |
dc.subject |
P-type silicon wafers |
eng |
dc.subject |
Passivation layer |
eng |
dc.subject |
Recombination velocity |
eng |
dc.subject |
Aluminum |
eng |
dc.subject |
Aluminum alloys |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Evaporation |
eng |
dc.subject |
Passivation |
eng |
dc.subject |
Phase transitions |
eng |
dc.subject |
Photovoltaic effects |
eng |
dc.subject |
Semiconducting silicon compounds |
eng |
dc.subject |
Silicon nitride |
eng |
dc.subject |
Silicon wafers |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2011.06.176 |
|
dc.bibliographicCitation.volume |
8 |
|
dc.bibliographicCitation.firstPage |
521 |
|
dc.bibliographicCitation.lastPage |
526 |
|
dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
|