dc.identifier.uri |
http://dx.doi.org/10.15488/10267 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/10340 |
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dc.contributor.author |
Pokharia, R.S.
|
|
dc.contributor.author |
Khiangte, K.R.
|
|
dc.contributor.author |
Rathore, J.S.
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|
dc.contributor.author |
Schmidt, J.
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|
dc.contributor.author |
Osten, H.J.
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|
dc.contributor.author |
Laha, A.
|
|
dc.contributor.author |
Mahapatra, S.
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dc.date.accessioned |
2020-12-08T15:27:05Z |
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dc.date.available |
2020-12-08T15:27:05Z |
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dc.date.issued |
2019 |
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dc.identifier.citation |
Pokharia, R.S.; Khiangte, K.R.; Rathore, J.S.; Schmidt, J.; Osten, H.J. et al.: Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy. In: Proceedings of SPIE 10914 (2019), 1091417. DOI: https://doi.org/10.1117/12.2509720 |
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dc.description.abstract |
We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd 2 O 3 /Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd 2 O 3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm. © 2019 SPIE. |
eng |
dc.language.iso |
eng |
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dc.publisher |
Bellingham, Wash. : SPIE |
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dc.relation.ispartofseries |
Proceedings of SPIE 10914 (2019) |
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dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. |
|
dc.subject |
Germanium |
eng |
dc.subject |
Germanium-on-insulator |
eng |
dc.subject |
Molecular beam epitaxy |
eng |
dc.subject |
MSM photodiodes |
eng |
dc.subject |
NIR photodetector |
eng |
dc.subject |
Silicon photonics |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
620 | Ingenieurwissenschaften und Maschinenbau
|
ger |
dc.title |
Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy |
eng |
dc.type |
BookPart |
|
dc.type |
Text |
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dc.relation.essn |
0277-786X |
|
dc.relation.issn |
1996-756X |
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dc.relation.doi |
https://doi.org/10.1117/12.2509720 |
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dc.bibliographicCitation.volume |
10914 |
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dc.bibliographicCitation.firstPage |
1091417 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
|