dc.identifier.uri |
http://dx.doi.org/10.15488/10237 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/10309 |
|
dc.contributor.author |
Edler, Frederik
|
|
dc.contributor.author |
Miccoli, Ilio
|
|
dc.contributor.author |
Pfnür, Herbert
|
|
dc.contributor.author |
Tegenkamp, Christoph
|
|
dc.date.accessioned |
2020-12-02T13:04:27Z |
|
dc.date.available |
2020-12-02T13:04:27Z |
|
dc.date.issued |
2019 |
|
dc.identifier.citation |
Edler, Frederik; Miccoli, Ilio; Pfnür, Herbert; Tegenkamp, Christoph: Space charge layer effects in silicon studied by in situ surface transport. In: Journal of Physics Condensed Matter 31 (2019), Nr. 21, 214001. DOI: https://doi.org/10.1088/1361-648X/ab094e |
|
dc.description.abstract |
Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Bristol : Institute of Physics Publishing |
|
dc.relation.ispartofseries |
Journal of Physics Condensed Matter 31 (2019), Nr. 21 |
|
dc.rights |
CC BY 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by/3.0/ |
|
dc.subject |
silicon surface |
eng |
dc.subject |
space charge layer |
eng |
dc.subject |
surface transport |
eng |
dc.subject |
Doping (additives) |
eng |
dc.subject |
Electric space charge |
eng |
dc.subject |
Electronic properties |
eng |
dc.subject |
Forestry |
eng |
dc.subject |
Schottky barrier diodes |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Silicon carbide |
eng |
dc.subject |
High temperature treatments |
eng |
dc.subject |
Low dimensional structure |
eng |
dc.subject |
Silicon surfaces |
eng |
dc.subject |
Space charge layers |
eng |
dc.subject |
Submonolayer coverage |
eng |
dc.subject |
Surface transport |
eng |
dc.subject |
Temperature dependent |
eng |
dc.subject |
Transport measurements |
eng |
dc.subject |
Crystal atomic structure |
eng |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Space charge layer effects in silicon studied by in situ surface transport |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
0953-8984 |
|
dc.relation.doi |
https://doi.org/10.1088/1361-648X/ab094e |
|
dc.bibliographicCitation.issue |
21 |
|
dc.bibliographicCitation.volume |
31 |
|
dc.bibliographicCitation.firstPage |
214001 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|