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Original version
Klunnikova, Y.V.; Anikeev, M.V.; Nackenhorst, U.; Filimonov, A.V.: Computational approach to the simulation of sapphire crystals growth by horizontal directed crystallization method. In: Journal of Physics: Conference Series 1236 (2019), Nr. 1, 12030. DOI: https://doi.org/10.1088/1742-6596/1236/1/012030
Repository version
To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/10218
Files in this item
| Abstract: | |
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In this article we present an integrated approach to sapphire crystals growth simulation. Thermally induced stresses in sapphire crystals growing by horizontal directed crystallization are simulated by finite element method. The simulation results correspond to experimental observations. The results of the investigation allow to improve the process of crystal growth to obtain high quality large sapphire crystal. © Published under licence by IOP Publishing Ltd.
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| License of this version: | CC BY 3.0 Unported - https://creativecommons.org/licenses/by/3.0/ |
| Publication type: | Article |
| Publishing status: | publishedVersion |
| Publication date: | 2019 |
| Keywords english: | Crystal growth, Computational approach, Directed crystallization, Growth simulation, High quality, Integrated approach, Sapphire crystal, Thermally induced stress, Sapphire |
| DDC: | 530 | Physik |
| Controlled keywords(GND): | Konferenzschrift |
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Fakultät für Bauingenieurwesen und Geodäsie
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