Computational approach to the simulation of sapphire crystals growth by horizontal directed crystallization method

Originalpublikation

Klunnikova, Y.V.; Anikeev, M.V.; Nackenhorst, U.; Filimonov, A.V.: Computational approach to the simulation of sapphire crystals growth by horizontal directed crystallization method. In: Journal of Physics: Conference Series 1236 (2019), Nr. 1, 12030. DOI: https://doi.org/10.1088/1742-6596/1236/1/012030

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Zusammenfassung:
In this article we present an integrated approach to sapphire crystals growth simulation. Thermally induced stresses in sapphire crystals growing by horizontal directed crystallization are simulated by finite element method. The simulation results correspond to experimental observations. The results of the investigation allow to improve the process of crystal growth to obtain high quality large sapphire crystal. © Published under licence by IOP Publishing Ltd.
Lizenzbestimmungen: CC BY 3.0 Unported - https://creativecommons.org/licenses/by/3.0/
Publikationstyp: Article
Publikationsstatus: publishedVersion
Erstveröffentlichung: 2019
Schlagwörter (englisch): Crystal growth, Computational approach, Directed crystallization, Growth simulation, High quality, Integrated approach, Sapphire crystal, Thermally induced stress, Sapphire
Fachliche Zuordnung (DDC): 530 | Physik
Kontrollierte Schlagwörter: Konferenzschrift

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