- Startseite
- →
- Fakultäten
- →
- Fakultät für Mathematik und Physik
- →
- Dokumentanzeige
JavaScript is disabled for your browser. Some features of this site may not work without it.
Originalpublikation
Langer, T.; Pfnür, H.; Schumacher, H.W.; Tegenkamp, C.: Graphitization process of SiC(0001) studied by electron energy loss spectroscopy. In: Applied Physics Letters 94 (2009), Nr. 11, 112106. DOI: https://doi.org/10.1063/1.3100776
Version im Repositorium
Zum Zitieren der Version im Repositorium verwenden Sie bitte diesen DOI:
https://doi.org/10.15488/2758
| Zusammenfassung: | |
|
Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile analysis in low energy electron diffraction and x-ray photoelectron spectroscopy. In the EELS data both electronic transitions and plasmon losses are sensitive to the interface. The collective in-plane excitations show a characteristic blueshift upon graphitization, while single electron transitions with dipole moments along the surface normal are suppressed for the buffer layer. These dependencies can be used to control the number of epitaxially grown graphene layers. © 2009 American Institute of Physics.
|
|
| Lizenzbestimmungen: | Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
| Publikationstyp: | Article |
| Publikationsstatus: | publishedVersion |
| Erstveröffentlichung: | 2009 |
| Schlagwörter (englisch): | Buffer layers, Dissociation, Electron diffraction, Electron emission, Electron energy levels, Electron scattering, Electrons, Energy dissipation, Graphite, Graphitization, Nuclear instrumentation, Silicon carbide, X ray diffraction analysis, X ray photoelectron spectroscopy, Blue shifts, Electron energy loss, Electron energy-loss spectroscopies, Electronic transitions, Epitaxially grown, Graphene growths, Graphene layers, Graphitization process, In planes, Low energy electrons, Plasmon loss, Spot profile analysis, Surface normals, X-ray photoelectron spectroscopies, Electron energy loss spectroscopy |
| Fachliche Zuordnung (DDC): | 530 | Physik |
Die Publikation erscheint in Sammlung(en):
-
Fakultät für Mathematik und Physik
Frei zugängliche Publikationen aus der Fakultät für Mathematik und Physik