Graphitization process of SiC(0001) studied by electron energy loss spectroscopy

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dc.identifier.uri http://dx.doi.org/10.15488/2758
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2784
dc.contributor.author Langer, T.
dc.contributor.author Pfnür, Herbert
dc.contributor.author Schumacher, H.W.
dc.contributor.author Tegenkamp, Christoph
dc.date.accessioned 2018-02-19T13:57:48Z
dc.date.available 2018-02-19T13:57:48Z
dc.date.issued 2009
dc.identifier.citation Langer, T.; Pfnür, H.; Schumacher, H.W.; Tegenkamp, C.: Graphitization process of SiC(0001) studied by electron energy loss spectroscopy. In: Applied Physics Letters 94 (2009), Nr. 11, 112106. DOI: https://doi.org/10.1063/1.3100776
dc.description.abstract Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile analysis in low energy electron diffraction and x-ray photoelectron spectroscopy. In the EELS data both electronic transitions and plasmon losses are sensitive to the interface. The collective in-plane excitations show a characteristic blueshift upon graphitization, while single electron transitions with dipole moments along the surface normal are suppressed for the buffer layer. These dependencies can be used to control the number of epitaxially grown graphene layers. © 2009 American Institute of Physics. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Applied Physics Letters 94 (2009), Nr. 11
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject Buffer layers eng
dc.subject Dissociation eng
dc.subject Electron diffraction eng
dc.subject Electron emission eng
dc.subject Electron energy levels eng
dc.subject Electron scattering eng
dc.subject Electrons eng
dc.subject Energy dissipation eng
dc.subject Graphite eng
dc.subject Graphitization eng
dc.subject Nuclear instrumentation eng
dc.subject Silicon carbide eng
dc.subject X ray diffraction analysis eng
dc.subject X ray photoelectron spectroscopy eng
dc.subject Blue shifts eng
dc.subject Electron energy loss eng
dc.subject Electron energy-loss spectroscopies eng
dc.subject Electronic transitions eng
dc.subject Epitaxially grown eng
dc.subject Graphene growths eng
dc.subject Graphene layers eng
dc.subject Graphitization process eng
dc.subject In planes eng
dc.subject Low energy electrons eng
dc.subject Plasmon loss eng
dc.subject Spot profile analysis eng
dc.subject Surface normals eng
dc.subject X-ray photoelectron spectroscopies eng
dc.subject Electron energy loss spectroscopy eng
dc.subject.ddc 530 | Physik ger
dc.title Graphitization process of SiC(0001) studied by electron energy loss spectroscopy
dc.type article
dc.type Text
dc.relation.issn 00036951
dc.relation.doi https://doi.org/10.1063/1.3100776
dc.bibliographicCitation.issue 11
dc.bibliographicCitation.volume 94
dc.bibliographicCitation.firstPage 112106
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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