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Firing stability of tube furnace-annealed n-type poly-Si on oxide junctions

Hollemann, Christina; Rienäcker, Michael; Soeriyadi, Anastasia; Madumelu, Chukwuka; Haase, Felix; Krügener, Jan; Hallam, Brett; Brendel, Rolf; Peibst, Robby (Chichester : Wiley, 2022)

Stability of the passivation quality of poly-Si on oxide junctions against the conventional mainstream high-temperature screen-print firing processes is highly desirable and also expected since the poly-Si on oxide preparation ...
For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?

Peibst, Robby; Kruse, Christian; Schäfer, Sören; Mertens, Verena; Bordihn, Stefan; Dullweber, Thorsten; Haase, Felix; Hollemann, Christina; Lim, Bianca; Min, Byungsul; Niepelt, Raphael; Schulte‐Huxel, Henning; Brendel, Rolf (Chichester : Wiley, 2019-11-05)

We present a systematic study on the benefit of the implementation of poly-Si on oxide (POLO) or related junctions into p-type industrial Si solar cells as compared with the benchmark of Passivated Emitter and Rear Cell ...
On the chances and challenges of combining electron-collecting nPOLO and hole-collecting Al-p+ contacts in highly efficient p-type c-Si solar cells

Peibst, Robby; Haase, Felix; Min, Byungsul; Hollemann, Christina; Brendemühl, Till; Bothe, Karsten; Brendel, Rolf (Chichester : Wiley, 2022)

ISFH is following a distinct cell development roadmap, which comprises—as a short-term concept—the combination of an n-type doped electron-collecting poly-Si on oxide (POLO) junction with an Al-alloyed p+ junction for hole ...
Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects

Rienäcker, Michael; Larionova, Yevgeniya; Krügener, Jan; Wolter, Sascha; Brendel, Rolf; Peibst, Robby (Les Ulis : EDP Sciences, 2021)

Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. ...
Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities

Rienäcker, Michael; Merkle, Agnes; Römer, Udo; Kohlenberg, Heike; Krügener, Jan; Brendel, Rolf; Peibst, Robby (London : Elsevier Ltd., 2016)

We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities – n+ doped BSF and p+ doped emitter. The recombination behavior is ...
A round Robin-Highliting on the passivating contact technology

Fellmeth, Tobias; Feldmann, Frank; Steinhauser, Bernd; Nagel, Henning; Mack, Sebastian; Hermle, Martin; Torregrosa, Frank; Ingenito, Andrea; Haug, Franz-Josef; Morisset, Audrey; Buchholz, Florian; Chaudhary, Aditya; Desrues, Thibaut; Haase, Felix; Min, Byungsul; Peibst, Robby; Tous, Loic (Les Ulis : EDP Sciences, 2021)

The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and ...
Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

Kruse, Christian N.; Schäfer, Sören; Haase, Felix; Mertens, Verena; Schulte-Huxel, Henning; Lim, Bianca; Min, Byungsul; Dullweber, Thorsten; Peibst, Robby; Brendel, Rolf (London : Nature Publishing Group, 2021)

We present a simulation-based study for identifying promising cell structures, which integrate poly-Si on oxide junctions into industrial crystalline silicon solar cells. The simulations use best-case measured input ...
Three-terminal tandem solar cells enabled by back-contacted bottom cells featuring passivating, carrier-selective polysilicon based junctions

Rienäcker, Michael (Hannover : Institutionelles Repositorium der Leibniz Universität Hannover, 2022)

This thesis investigates back-contacted (IBC) bottom solar cells with passivating and carrier-selective POLO contacts with three terminals (3T-POLO-IBC cell). Such cells form the foundation of monolithic three-terminal ...

Now showing items 1-8 of 8

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