Stability of the passivation quality of poly-Si on oxide junctions against the conventional mainstream high-temperature screen-print firing processes is highly desirable and also expected since the poly-Si on oxide preparation ...

ISFH is following a distinct cell development roadmap, which comprises—as a short-term concept—the combination of an n-type doped electron-collecting poly-Si on oxide (POLO) junction with an Al-alloyed p+ junction for hole ...

We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities – n+ doped BSF and p+ doped emitter. The recombination behavior is ...

We present a simulation-based study for identifying promising cell structures, which integrate poly-Si on oxide junctions into industrial crystalline silicon solar cells. The simulations use best-case measured input ...