Browsing by Subject "Current voltage characteristics"

Browsing by Subject "Current voltage characteristics"

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  • Schmidt, T.; König, P.; McCann, E.; Fal'ko, V.I.; Haug, Rolf J. (College Park, MD : American Physical Society, 2001)
    Direct measurement of the energy dependence of the inelastic decay rate τ(E) of a quasiparticle state in a disordered conductor was performed using resonant tunneling spectroscopy. Decay rate was obtained from the analysis ...
  • Kruse, Christian N.; Wolf, Martin; Schinke, Carsten; Hinken, David; Brendel, Rolf; Bothe, Karsten (London : Elsevier Ltd., 2017)
    The fill factor determined from a measured current-voltage characteristic of a bare solar cell depends on the number and positions of the electrical contacting probes. Nine different geometries for contacting the front ...
  • Schmidt, T.; Jansen, A.G.M.; Haug, Rolf J.; Klitzing, K.V.; Eberl, K. (College Park, MD : American Physical Society, 1998)
    Applying magnetic fields up to B = 29 T, we investigate the formation of electric-field domains in Landau-quantized semiconductor superlattices. Surprisingly, the electric-field distribution remains determined by the subband ...
  • Agafonov, Oleksiy B.; Dais, Christian; Grützmacher, Detlev; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2010)
    Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a ...
  • Heine, A.W.; Tutuc, D.; Zwicknagl, G.; Schuh, D.; Wegscheider, W.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2013)
    The competition between the Kondo effect and the Ruderman-Kittel-Kasuya- Yoshida (RKKY) interaction is investigated in a double quantum dots system, coupled via a central open conducting region. A perpendicular magnetic ...
  • Hapke-Wurst, I.; Zeitler, U.; Keyser, U.F.; Haug, Rolf J.; Pierz, Klaus; Ma, Z. (College Park, MD : American Institute of Physics, 2003)
    A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with ...