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Original version
Agafonov, O.B.; Dais, C.; Grützmacher, D.; Haug, R.J.: Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots. In: Applied Physics Letters 96 (2010), Nr. 22, 222107. DOI: https://doi.org/10.1063/1.3442508
Repository version
To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/2839
Files in this item
| Abstract: | |
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Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots. © 2010 American Institute of Physics.
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| License of this version: | Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
| Publication type: | article |
| Publishing status: | publishedVersion |
| Publication date: | 2010 |
| Keywords english: | Confinement potential, Double barriers, Ge quantum dot, Heterostructures, Hole state, Magnetotunneling, Ordered array, Parabolic confinements, Quantum confinement effects, Quantum Dot, Self assembled quantum dots, Si/Ge, Zero bias, Germanium, Resonant tunneling, Resonant tunneling diodes, Semiconductor diodes, Semiconductor quantum dots, Current voltage characteristics |
| DDC: | 530 | Physik |
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Fakultät für Mathematik und Physik
Frei zugängliche Publikationen aus der Fakultät für Mathematik und Physik