This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we ...

While ray tracing of solar cells was established decades ago, ray tracing of entire modules has met obstacles, mainly because module optics are affected by geometric structures varying over a large scale of dimensions. In ...

The electroluminescence emission of crystalline silicon solar cells at near-bandgap wavelengths is investigated. We show that the intensity of the emitted luminescence at near-bandgap wavelengths is directly proportional ...

Based on a combined analysis of spectroscopic ellipsometry, reflectance and transmittance measurements as well as spectrally resolved luminescence measurements and spectral responsivity measurements, we present data of the ...

A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed ...

This paper investigates process-induced variations of the open-circuit voltage (Voc) using voltage-dependent quantum efficiency measurements. By means of device modelling we show that this method is able to explain the Voc ...

The fill factor determined from a measured current-voltage characteristic of a bare solar cell depends on the number and positions of the electrical contacting probes. Nine different geometries for contacting the front ...

I-V measurements are sensitive to the number and positioning of current and voltage sensing contacts. For busbarless solar cells, measurement setups have been developed using current collection wires and separate voltage ...

Spectrophotometers are operated in numerous fields of science and industry for a variety of applications. In order to provide confidence for the measured data, analyzing the associated uncertainty is valuable. However, the ...

The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, ...