Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

Schmidt, O.G.; Denker, U.; Eberl, K.; Kienzle, O.; Ernst, F.; Haug, Rolf J.

Original version

Schmidt, O.G.; Denker, U.; Eberl, K.; Kienzle, O.; Ernst, F.; Haug, R.J.: Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. In: Applied Physics Letters 77 (2000), Nr. 26, S. 4341-4343. DOI: https://doi.org/10.1063/1.1332817

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/2828

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Abstract:
Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages. © 2000 American Institute of Physics.
License of this version:	Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type:	Article
Publishing status:	publishedVersion
Publication date:	2000
Keywords english:	RTD, heavy-heavy hole transition, heavy-lihht hole transition
DDC:	530 \| Physik