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Original version
Bockhorn, L.; Velieva, A.; Hakim, S.; Wagner, T.; Rugeramigabo, E.P. et al.: Influence of oval defects on transport properties in high-mobility two-dimensional electron gases. In: Applied Physics Letters 108 (2016), Nr. 9, 92103. DOI: https://doi.org/10.1063/1.4942886
Repository version
To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/2824
Files in this item
| Abstract: | |
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Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause a negative magnetoresistance. On the basis of this, we show that the number of oval defects seen on the material surface is comparable with the density of macroscopic growth defects determined from the negative magnetoresistance. We examine several materials with different densities of oval defects nS which were grown in one cycle under the same conditions to verify our observations. Paradoxically, the material with the largest number of oval defects has also the highest electron mobility. © 2016 AIP Publishing LLC.
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| License of this version: | Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
| Publication type: | Article |
| Publishing status: | publishedVersion |
| Publication date: | 2016 |
| Keywords english: | Electron gas, Magnetoresistance, Surface defects, Transport properties, Two dimensional electron gas, Different densities, Growth defects, High mobility, Material surface, Negative magneto-resistance, Oval defects, Defects |
| DDC: | 530 | Physik |
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Fakultät für Mathematik und Physik
Frei zugängliche Publikationen aus der Fakultät für Mathematik und Physik