Low-temperature hysteresis in the field effect of bilayer graphene

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Barthold, P.; Lüdtke, T.; Schmidt, H.; Haug, R.J.: Low-temperature hysteresis in the field effect of bilayer graphene. In: New Journal of Physics 13 (2011), 43020. DOI: https://doi.org/10.1088/1367-2630/13/4/043020

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Sum total of downloads: 145




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Abstract: 
Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
License of this version: CC BY-NC-SA 3.0 Unported
Document Type: Article
Publishing status: publishedVersion
Issue Date: 2011
Appears in Collections:Fakultät für Mathematik und Physik

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pos. country downloads
total perc.
1 image of flag of Germany Germany 83 57.24%
2 image of flag of United States United States 33 22.76%
3 image of flag of China China 19 13.10%
4 image of flag of Taiwan Taiwan 2 1.38%
5 image of flag of No geo information available No geo information available 1 0.69%
6 image of flag of Italy Italy 1 0.69%
7 image of flag of India India 1 0.69%
8 image of flag of Indonesia Indonesia 1 0.69%
9 image of flag of Switzerland Switzerland 1 0.69%
10 image of flag of Austria Austria 1 0.69%
    other countries 2 1.38%

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