Low-temperature hysteresis in the field effect of bilayer graphene

Originalpublikation

Barthold, P.; Lüdtke, T.; Schmidt, H.; Haug, R.J.: Low-temperature hysteresis in the field effect of bilayer graphene. In: New Journal of Physics 13 (2011), 43020. DOI: https://doi.org/10.1088/1367-2630/13/4/043020

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Zusammenfassung:
Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Lizenzbestimmungen: CC BY-NC-SA 3.0 Unported - https://creativecommons.org/licenses/by-nc-sa/3.0/
Publikationstyp: Article
Publikationsstatus: publishedVersion
Erstveröffentlichung: 2011
Schlagwörter (englisch): Back-gate, Bi-layer, Charge trap, Field effects, Low temperatures, Sweep rates, Charge trapping, Graphene, Magnetic fields, Hysteresis
Fachliche Zuordnung (DDC): 530 | Physik

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